Polysilicon sensors for CMOS-MEMS electrothermal probes

TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems

Volumn , Issue , 2009, Pages 2425-2428

  Liu, J ^a   Noman, M ^a   Bain, J A ^a   Schlesinger, T E ^a   Fedder, G K ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

CMOS MEMS; Electrothermal; Piezoresistive sensing; Probes

Indexed keywords

CMOS-MEMS; FORCE SENSITIVITY; FORCE SENSOR; LOAD FORCES; PIEZO-RESISTIVE; PIEZORESISTANCE; PIEZORESISTIVE SENSING; POLYSILICON SENSORS; PROBE ARRAY; RESISTANCE CHANGE; RESISTIVE SENSOR; SENSITIVITY DECREASE; TEMPERATURE COEFFICIENT OF RESISTANCE; THERMAL BOUNDARY CONDITIONS;

ACTUATORS; BOUNDARY CONDITIONS; ELECTRIC REACTORS; MEMS; MICROELECTROMECHANICAL DEVICES; MICROSYSTEMS; PIEZOELECTRIC TRANSDUCERS; POLYSILICON; PROBES; RESISTORS; SILICIDES; THERMAL CONDUCTIVITY OF SOLIDS;

SOLID-STATE SENSORS;

EID: 71449092978     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SENSOR.2009.5285434     Document Type: Conference Paper

References (3)

1. J. Liu et al., "Lever-based CMOS-MEMS probes for reconfigurable RF IC's", in Tech. Digest MEMS '09, Sorrento, Italy, Jan. 25-29, 2009, pp. 1111-1114.
2. T. Chu Duc, J.F. Creemer and P.M. Sarro, "Piezoresistive cantilever for nano-Newton sensing in two dimensions", in Tech. Digest MEMS '06, Istanbul, Turkey, Jan. 22-26, 2006, pp. 586-589.
3. J. Liu et al., "Mechanical properties measurements of 0.35 μ m CMOS-MEMS structures", in Tech. Digest MSM '06, pp. 851-854, 2006.