PMN-PT single crystal thick films on silicon substrate for high-frequency micromachined ultrasonic transducers

Applied Physics A: Materials Science and Processing

Volumn 98, Issue 1, 2010, Pages 233-237

  Peng, J ^a   Lau, S T ^a   Chao, C ^a   Dai, J Y ^a   Chan, H L W ^a   Luo, H S ^b   Zhu, B P ^c   Zhou, Q F ^c   Shung, K K ^c  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^b SHANGHAI INSTITUTE OF CERAMICS   (China)

^c University of Southern California ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE ELEMENTS; CENTER FREQUENCY; ELECTROMECHANICAL COUPLING COEFFICIENTS; HIGH FREQUENCY HF; HIGH PIEZOELECTRIC CONSTANT; HYBRID PROCESSING; LOW INSERTION LOSS; MECHANICAL LAPPING; MICRO-MACHINED ULTRASONIC TRANSDUCER; PMN-PT FILM; PMN-PT SINGLE CRYSTAL; SILICON MICROMACHINING; SILICON SUBSTRATES; SILICON TECHNOLOGIES; SINGLE-CRYSTALLINE; TRANSDUCER STRUCTURE; WET CHEMICALS;

ACOUSTIC TRANSDUCERS; BONDING; ELECTROACOUSTIC TRANSDUCERS; ELECTROMECHANICAL DEVICES; ENERGY CONVERSION; PIEZOELECTRIC TRANSDUCERS; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS; STAINLESS STEEL; THICK FILMS; ULTRASONIC EQUIPMENT; ULTRASONIC MEASUREMENT; ULTRASONIC TRANSDUCERS; ULTRASONIC WAVES; ULTRASONICS; WAFER BONDING;

SILICON WAFERS;

EID: 71249130793     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-009-5381-1     Document Type: Article

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