Temperature variation of the fundamental absorption edge in AgGaSe2

Physica B: Condensed Matter

Volumn 404, Issue 21, 2009, Pages 4095-4099

  Calderon E ^a   Fernandez B ^a   Duran L ^a   Grima, P ^a   Morocoima, M ^a   Quintero, E ^a   Rincon C ^a   Quintero, M ^a  

^a FACULTAD DE CIENCIAS   (Venezuela)

Author keywords

Chalcopyrite compounds; Energy gap; Optical absorption; Semiconductor materials

Indexed keywords

CHALCOPYRITE SEMICONDUCTOR; DEFORMATION POTENTIAL; ELECTRON PHONON; FUNDAMENTAL ABSORPTION EDGE; OPTICAL ABSORPTION; OPTICAL ABSORPTION MEASUREMENT; OPTICAL ABSORPTION SPECTRUM; OPTICAL ENERGY GAP; SEMIEMPIRICAL MODELS; TEMPERATURE RANGE; TEMPERATURE VARIATION;

ABSORPTION; COPPER COMPOUNDS; ELECTRON MOBILITY; ELECTRON-PHONON INTERACTIONS; ENERGY GAP; LIGHT ABSORPTION; SOLIDS; THERMAL EXPANSION;

SEMICONDUCTOR MATERIALS;

EID: 71149086935     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.07.169     Document Type: Article

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