Growth and characterization of well-aligned rutile tio 2 nanocrystals on sapphire substrates via metal organic vapour deposition

Journal of Materials Science: Materials in Electronics

Volumn 20, Issue SUPPL. 1, 2009, Pages

  Chen, C A ^a   Korotcov, A ^a,b   Huang, Ying Sheng ^a   Chung, W H ^a   Tsai, D S ^a   Tiong, K K ^c  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b HOWARD UNIVERSITY   (United States)

^c NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EMISSION SCANNING ELECTRON MICROSCOPY; METAL ORGANIC; METALORGANIC CHEMICAL VAPOUR DEPOSITION; RUTILE PHASE; RUTILE TIO; SAPPHIRE SUBSTRATES; SPECTROSCOPIC PROPERTY; SUBSTRATE ORIENTATION; TIO; VAPOUR DEPOSITION; VERTICALLY ALIGNED; WELL-ALIGNED; X-RAY DIFFRACTOMETRY; XRD;

CORUNDUM; FIELD EMISSION; FIELD EMISSION MICROSCOPES; NANOCRYSTALS; ORGANOMETALLICS; OXIDE MINERALS; RAMAN SPECTROSCOPY; RAPID SOLIDIFICATION; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SIMULATED ANNEALING; TITANIUM OXIDES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SUBSTRATES;

EID: 71049181866     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/S10854-008-9611-7     Document Type: Conference Paper

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