Ultimate contact resistance scaling enabled by an accurate contact resistivity extraction methodology for sub-20 nm node

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2009, Pages 102-103

  Lin, Hong Nien ^a   Hsu, Wen Wei ^a   Lee, Wen Chin ^a   Wann, Clement H ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS DEVICES; CONTACT RESISTIVITIES; FORMATION PROCESS; GEOMETRIC CORRECTION; PARASITIC RESISTANCES;

CONTACT RESISTANCE; SILICIDES;

NANOTECHNOLOGY;

EID: 71049164729     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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