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Volumn 66, Issue 16, 2002, Pages 1-4

Ultrafast band-edge tuning of a two-dimensional silicon photonic crystal via free-carrier injection

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EID: 70749143748     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.66.161102     Document Type: Article
Times cited : (2)

References (33)
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    • E. Chow, et al., Opt. Lett. 26, 286 (2001).
    • (2001) Opt. Lett. , vol.26 , pp. 286
    • Chow, E.1
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    • R.F. Cregan, et al., Science 285, 1537 (1999).
    • (1999) Science , vol.285 , pp. 1537
    • Cregan, R.F.1
  • 9
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    • Mater Res. Soc. Proc. No. 722 (Materials Research Society, Pittsburgh, L3.1
    • H. M. van Driel et al., in Tuning 2-D Silicon Photonic Crystals, Mater Res. Soc. Proc. No. 722 (Materials Research Society, Pittsburgh, 2002), L3.1.
    • (2002) Tuning 2-D Silicon Photonic Crystals
    • van Driel, H.M.1
  • 26
    • 85038305302 scopus 로고    scopus 로고
    • Using an effective mass27 of (formula presented) (where (formula presented) is the electron mass), a momentum relaxation time of (formula presented) and an intervalence band cross section28 of (formula presented) the magnitude of the free-carrier induced imaginary term15 in the dielectric function is approximately an order of magnitude smaller than that of the real term
    • Using an effective mass27 of (formula presented) (where (formula presented) is the electron mass), a momentum relaxation time of (formula presented) and an intervalence band cross section28 of (formula presented) the magnitude of the free-carrier induced imaginary term15 in the dielectric function is approximately an order of magnitude smaller than that of the real term.
  • 31
    • 85038318191 scopus 로고    scopus 로고
    • Using an Auger coefficient of (formula presented) for silicon,32 the minimum recombination lifetime (corresponding the maximum density of (formula presented) is predicted to be approximately 13 ns, consistent with the observed time-independent plateau in the picosecond regime
    • Using an Auger coefficient of (formula presented) for silicon,32 the minimum recombination lifetime (corresponding the maximum density of (formula presented) is predicted to be approximately 13 ns, consistent with the observed time-independent plateau in the picosecond regime.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.