Improved light extraction efficiency of GaN-based light emitting diodes by using needle-shape indium tin oxide p-contact

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 2083-2085

  Ishida, Fumio ^a   Yoshimura, Kazumasa ^b   Hoshino, Katsuyuki ^a   Tadatomo, Kazuyuki ^a  

^a YAMAGUCHI UNIVERSITY   (Japan)

^b Yamaguchi Prefectural Industrial Technology Institute   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTROLLED CONDITIONS; DEPOSITION TEMPERATURES; ELECTRON BEAM EVAPORATION; EXTERNAL QUANTUM EFFICIENCY; FORWARD CURRENTS; GAN/SAPPHIRE; HIGH EFFICIENCY; INDIUM TIN OXIDE; KEY TECHNOLOGIES; LIGHT-EXTRACTION EFFICIENCY; NEEDLE SHAPE; P-CONTACTS; PARTIAL OXYGEN PRESSURES; PEAK WAVELENGTH; VACUUM CHAMBERS;

EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; LIGHT EMISSION; NEEDLES; ORGANIC LIGHT EMITTING DIODES (OLED); OXYGEN; PHOTOLITHOGRAPHY; SEMICONDUCTOR DIODES; TIN; TITANIUM COMPOUNDS;

LIGHT EMITTING DIODES;

EID: 70749126324     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778439     Document Type: Conference Paper

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