Sub-2 nm size-tunable high-density Pt nanoparticle embedded nonvolatile memory

IEEE Electron Device Letters

Volumn 30, Issue 12, 2009, Pages 1362-1364

  Yun, Minseong ^a   Mueller, David W ^a   Hossain, Maruf ^a   Misra, Veena ^b   Gangopadhyay, Shubhra ^a  

^a University of Missouri   (United States)

^b North Carolina State University   (United States)

Author keywords

Nanoparticle (NP); Nonvolatile memory (NVM); Size tunable platinum

Indexed keywords

CAPPING OXIDE LAYERS; DEPOSITION METHODS; DEVICE APPLICATION; DIFFERENT SIZES; HIGH-DENSITY; MEMORY WINDOW; MOS STRUCTURE; NON-VOLATILE MEMORIES; NONVOLATILE MEMORY (NVM); NONVOLATILITY; PARTICLE DENSITIES; PT NANOPARTICLES; QUANTUM CONFINEMENT EFFECTS; SIZE-TUNABLE PLATINUM; STORAGE CHARACTERISTIC;

ELECTRIC FIELDS; NANOPARTICLES;

PLATINUM;

EID: 70549102285     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2033618     Document Type: Article

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