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Volumn , Issue , 2009, Pages
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Impact of thermal through silicon via (TTSV) on the temperature profile of multi-layer 3-D device stack
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Author keywords
[No Author keywords available]
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Indexed keywords
3-D ICS;
DELAY TIME;
DEVICE RELIABILITY;
GLOBAL WIRES;
HEAT DISSIPATION;
POWER DENSITIES;
SHARP INCREASE;
SI LAYER;
SILICON LAYER;
TEMPERATURE PROFILES;
THERMAL ANALYSIS;
THERMAL DISSIPATION;
THROUGH-SILICON-VIA;
WIRE PITCH;
THERMOANALYSIS;
WIRE;
THREE DIMENSIONAL;
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EID: 70549097058
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/3DIC.2009.5306527 Document Type: Conference Paper |
Times cited : (15)
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References (0)
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