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Volumn , Issue , 2009, Pages

Impact of thermal through silicon via (TTSV) on the temperature profile of multi-layer 3-D device stack

Author keywords

[No Author keywords available]

Indexed keywords

3-D ICS; DELAY TIME; DEVICE RELIABILITY; GLOBAL WIRES; HEAT DISSIPATION; POWER DENSITIES; SHARP INCREASE; SI LAYER; SILICON LAYER; TEMPERATURE PROFILES; THERMAL ANALYSIS; THERMAL DISSIPATION; THROUGH-SILICON-VIA; WIRE PITCH;

EID: 70549097058     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/3DIC.2009.5306527     Document Type: Conference Paper
Times cited : (15)

References (0)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.