Insulator-semiconductor-metallic state transition induced by electric fields in Mn-doped NaNbO3

Physica Status Solidi - Rapid Research Letters

Volumn 3, Issue 5, 2009, Pages 127-129

  Molak, Andrzej ^a   Szot, Krzysztof ^b  

^a UNIVERSITY OF SILESIA   (Poland)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; AFM TIP; CONDUCTING FILAMENT; ELECTRIC CURRENT FLOW; EXTENDED DEFECT; INSULATOR METAL TRANSITION; METALLIC STATE; MN CRYSTAL; MN IONS; MN-DOPED; NON-HOMOGENEOUS DISTRIBUTION; TEMPERATURE DEPENDENCE;

ATOMIC FORCE MICROSCOPY; DOPING (ADDITIVES); ELECTRIC FIELDS; MANGANESE; MANGANESE COMPOUNDS; SOLVENTS;

METAL INSULATOR TRANSITION;

EID: 70450267661     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.200903052     Document Type: Article

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