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Applied Physics A: Materials Science and Processing

Volumn 97, Issue 3, 2009, Pages 713-720

Crystallization behavior of 80GeS220Ga2S3 chalcogenide glass

(6) Lin, Changgui a Calvez, Laurent b Rozé, Mathieu b Tao, Haizheng a Zhang, Xianghua b Zhao, Xiujian a

a WUHAN UNIVERSITY OF TECHNOLOGY (China)

b UNIVERSITÉ DE RENNES 1 (France)

Author keywords

[No Author keywords available]

Indexed keywords

CERAMIZATION; CHALCOGENIDE GLASS; CRYSTALLIZATION BEHAVIOR; CRYSTALLIZATION MECHANISMS; CRYSTALLIZATION RATES; DSC MEASUREMENTS; EXOTHERMS; LOW TEMPERATURES; LOW-ACTIVATION ENERGY; NON-ISOTHERMAL METHOD; POWDER SAMPLES; SPECTRAL REGION; THERMAL SHOCK RESISTANCE; XRD;

ACTIVATION ENERGY; CRYSTALLIZATION; FRACTURE TOUGHNESS; GALLIUM; GLASS CERAMICS; MECHANICAL PROPERTIES; RATE CONSTANTS;

PRECIPITATION (CHEMICAL);

EID: 70450225511 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-009-5304-1 Document Type: Article

Times cited : (67)

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