Dynamic response of carbon nanotube field effect transistor circuits

Nanotechnology 2009: Fabrication, Particles, Characterization, MEMS, Electronics and Photonics - Technical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009

Volumn 1, Issue , 2009, Pages 625-628

  Xu, Yau ^a   Srivastava, Ashok ^a  

^a LOUISIANA STATE UNIVERSITY   (United States)

Author keywords

Carbon nanolubes; CNT interconnect; CNT FET modeling; Nanotechnology

Indexed keywords

CAPACITANCE MODEL; CARBON NANOTUBE FIELD EFFECT TRANSISTORS; CNT-FET MODELING; CURRENT TRANSPORT; DYNAMIC CHARACTERISTICS; INTERCONNECT MODELS; NANOLUBES; RING OSCILLATOR; STATIC CHARACTERISTIC; VERILOG-AMS LANGUAGE;

CARBON NANOTUBES; CIRCUIT SIMULATION; COMPUTER HARDWARE DESCRIPTION LANGUAGES; DYNAMIC RESPONSE; MEMS; MESFET DEVICES; MICROELECTROMECHANICAL DEVICES; NANOTECHNOLOGY; OSCILLATORS (ELECTRONIC); SILICON SOLAR CELLS; SIMULATORS;

FIELD EFFECT TRANSISTORS;

EID: 70450208937     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)

1. F. Nihey, H. Hongo, Y. Ochiai, M. Yudasaka, and S. lijima, "Carbon-nanotube field effect transistors with very high intrinsic transconductance," Jpn. J. Appl. Phys., vol. 42, pp. L1288-L1291, Oct. 8 2003.
2. S. J. Wind, J. Appenzeller, R. Martel, V. Derycke, and P. Avouris, "Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes," Applied Physics Letters, vol. 80, pp. 3817-3819, May 20 2002.
3. J. W. Park, J. B. Choi, and K. H. Yoo, "Formation of a quantum dot in a single-walled carbon nanotube using the Al top-gates," Applied Physics Letters, vol. 81, pp. 2644-2646, Sep. 30 2002.
4. F. Nihey, H. Hongo, M. Yudasaka, and S. lijima, "A top-gate carbon - nanotube field-effect transistor with a titanium-dioxide insulator," Jpn. J. Appl. Phys., vol. 41, pp. L1049-L1051, Oct. 2002.
5. J. M. Marulanda, A. Srivastava, and A. K. Sharma, "Current transport modeling in carbon nanotube field effect transistors (CNT-FETs) and bio-sensing applications," in Proc. SP1E: Nanosensors and Microsensors for Bio-Systems, vol. 6931, pp. 693108-12, 2008.
6. "Verilog-AMS Language Reference Manual," http://www.designers- guide.org/VerilogAMS/, August 2008.
7. A. L. Fetter, "Electrodynamics of a layered electron gas. I. single layer," Annals of Physics, vol. 81, pp. 367-393, 1973.
8. A. L. Fetter, "Electrodynamics of a layered electron gas. II. periodic array," Annals of Physics, vol. 88, pp. 1-25, 1974.
9. A. Maffucci, G. Miano, and F. Villone, "A transmission line model for metallic carbon nanotube interconnects," Int. J. Circuit Theory Appl., vol. 36, pp. 31-51, 2008.
10. Y, Xu and A. Srivastava, "A Model for Carbon Nanotube interconnects," Int. J. Circ. Theor. Appl., Accepted, 2009,
11. D. T, Thomas, "Engineering Electromagnetics," Pergamon Press, 1972.
12. T. A. Fjeldly, T. Ytterdal, and M. S. Shur, "Introduction to Device Modeling and Circuit Simulation," Wiley, 1998.
13. Y. Cheng and C. Hu, "MOSFET Modeling and BS1M3 User's Guide," Springer, 1999.
14. Y. Xu and A. Srivastava, "Transient Behavior of Integrated Carbon Nanotube Field Effect Transistor Circuits," in Proc. SP1E: Nano-, Bio, and Info-Tech Sensors and Systems, vol. 7291, 2009 (in press).
15. th ed. Upper Saddle River, New Jersey: Prentice Hall, 2000.
16. S. J. Wind, J. Appenzeller, R. Martel, V. Derycke, and P. Avouris, "Fabrication and electrical characterization of top gate single-wall carbon nanotube field-effect transistors," J. Vac. Sci. Technol. B, vol. 20, pp. 2798-2801, Nov. 2002.
17. S. Ramo, J. R. Whinnery, and T. V. Duzer, "Fields and Waves in Communication Electronics." New York: Wiley, 1994.
18. th Device Research Conference, 2006, State College, PA, USA, 2006, pp. 171-172.