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Physical Review Letters

Volumn 103, Issue 21, 2009, Pages

Electric-Field-Enhanced neutralization of deep centers in GaAs

(4) Eshchenko, D G a,b,e Storchak, V G c Cottrell, S P d Morenzoni, E b

a PHYSIK INSTITUT DER UNIVERSITÄT ZÜRICH (Switzerland)

b PAUL SCHERRER INSTITUTE (Switzerland)

c KURCHATOV INSTITUTE (Russian Federation)

d RUTHERFORD APPLETON LABORATORY (United Kingdom)

e INSTITUTE FOR NUCLEAR RESEARCH (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DYNAMICS; DEEP TRAPS; ELECTRON AND HOLE TRAPS; EXCESS ELECTRONS; GAAS; HIGH VOLTAGE; MUON SPIN RESONANCE; MUONIUM; RF EXCITATION; SEMI-INSULATING GAAS;

ELECTRIC FIELDS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SPIN DYNAMICS;

GALLIUM ALLOYS;

EID: 70449886301 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.103.216601 Document Type: Article

Times cited : (7)

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