Nanocrystalline Si-based Metal-Oxide-Semiconductor photodetectors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7381, Issue , 2009, Pages

  Yu, Zhenrui ^a   Aceves Mijares, Mariano ^a   Lopez, J A Luna ^b   Deng, Jinxiang ^c  

^a INSTITUTO NACIONAL DE ASTROFÍSICA   (Mexico)

^b BENEMÉRITA UNIVERSIDAD AUTÓNOMA DE PUEBLA   (Mexico)

^c BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

MOS like; Photodetector; Si nanocrystals; UV response

Indexed keywords

DARK CURRENT RATIO; IC TECHNOLOGY; METAL OXIDE SEMICONDUCTOR; NANOCRYSTALLINE SI; NEAR INFRARED; PHOTORESPONSES; RESPONSE RANGE; RESPONSIVITY; REVERSE CURRENTS; REVERSE LEAKAGE CURRENT; SI NANOCRYSTAL; SI SUBSTRATES; SPECTRAL RESPONSE; UV LIGHT; UV-VIS-NIR; WHITE LIGHT;

INFRARED DEVICES; MOS DEVICES; NANOCRYSTALS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTING SILICON COMPOUNDS; SENSORS;

SEMICONDUCTING SILICON;

EID: 70449809876     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.833385     Document Type: Conference Paper

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