The effect of nitrogen incorporation on surface properties of silicon oxynitride films

Physica Status Solidi - Rapid Research Letters

Volumn 3, Issue 1, 2009, Pages 25-27

  Hong, Jongin ^a,c   Kim, Yunseok ^b   Paik, Hanjong ^b   No, Kwangsoo ^b   Lukes, Jennifer R ^a  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

FOURIER TRANSFORM INFRARED SPECTROMETRY; KELVIN PROBE FORCE MICROSCOPY; MACROSCOPIC MEASUREMENTS; MOLECULAR BONDING; NANO SCALE; NANO-SCALE MEASUREMENTS; NITROGEN INCORPORATION; POLAR COMPONENTS; SILICON OXYNITRIDE FILMS; SURFACE FREE ENERGY; SURFACE HETEROGENEITIES; WETTING BEHAVIOR;

ANGLE MEASUREMENT; CONTACT ANGLE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FREE ENERGY; NANOSTRUCTURED MATERIALS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE; SURFACE POTENTIAL;

SURFACE PROPERTIES;

EID: 70449637783     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.200802234     Document Type: Article

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