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The origin of the unbound thiol of the C1 SAM, which was prepared with C1 disulfide, remains unclear. We also observed a small peak at 168.3 eV in the case of the C1 SAM, which can be assigned to sulfonates. We anticipate that there are effects of physisorbed impurities of thiols or the formation of the unbound sulfur and sulfonates might be caused by the damage of X-ray irradiation.
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The origin of the unbound thiol of the C1 SAM, which was prepared with C1 disulfide, remains unclear. We also observed a small peak at 168.3 eV in the case of the C1 SAM, which can be assigned to sulfonates. We anticipate that there are effects of physisorbed impurities of thiols or the formation of the unbound sulfur and sulfonates might be caused by the damage of X-ray irradiation.
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The mixing ratio of solution is not automatically transferred to the surface composition, and it is difficult to estimate the exact composition ration by XPS and TDS. We found that population of C1 and C8 tends to overwhelm that of CHT by simply comparing the area of desorption peaks of C1, C8 disulfides, and CH thiol.
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The mixing ratio of solution is not automatically transferred to the surface composition, and it is difficult to estimate the exact composition ration by XPS and TDS. We found that population of C1 and C8 tends to overwhelm that of CHT by simply comparing the area of desorption peaks of C1, C8 disulfides, and CH thiol.
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