32 Gb/s transmission experiments using high speed 850 nm VCSELs

2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009

Volumn , Issue , 2009, Pages

  Westbergh, Petter ^a   Gustavsson, Johan S ^a   Haglund, Åsa ^a   Larsson, Anders ^a   Hopfer, Friedhelm ^b   Bimberg, Dieter ^b   Joel, Andrew ^c  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c IQE INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIT RATES; DIFFERENTIAL GAIN; ERROR FREE TRANSMISSION; HIGH-SPEED OPERATION; INGAAS QUANTUM WELLS; OXIDE APERTURE; PARASITICS; ROOM TEMPERATURE; SELF-HEATING; TRANSMISSION EXPERIMENTS;

ELECTRON OPTICS; QUANTUM ELECTRONICS; SURFACE EMITTING LASERS;

QUANTUM WELL LASERS;

EID: 70449393329     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. T. Anan et al., "High-speed 1.1-μm range InGaAs VCSELs," OFC, San Diego, CA, USA, 2008, paper OThS5.
2. Y.-C. Chang et al., "High-efficiency, high-speed VCSELs with 35 Gbit/s error-free operation," Electron. Lett. 43, 1022 (2007).
3. P. Westbergh et al., "Large aperture 850 nm VCSELs operating at bit rates up to 25 Gbit/s," Electron. Lett. 44, 907 (2008).
4. R. Johnson and D. Kuchta, "30 Gb/s directly modulated 850 nm datacom VCSELs," CLEO 2008, post-deadline paper CPDB2.
5. P. Westbergh et.al., submitted to IEEE J. Sel. Top. Quantum Electron.