Role of the deep parasitic bipolar device in mitigating the single event transient phenomenon

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 936-939

  Mikami, Nobukazu ^a   Nakauchi, Takuya ^a   Oyama, Akira ^a   Kobayashi, Hajime ^a   Usui, Hiroki ^a  

^a SONY CORPORATION   (Japan)

Author keywords

Logic circuit; Parasitic bipolar transistor; SER; SET; SEU; Single event transient; Single Event Upset; Soft error rate

Indexed keywords

PARASITIC BIPOLAR TRANSISTOR; SER; SET; SEU; SINGLE EVENT TRANSIENT; SINGLE EVENT UPSET; SOFT ERROR RATE;

BIPOLAR TRANSISTORS; ELECTRIC NETWORK ANALYSIS; MOS DEVICES; SWITCHING CIRCUITS; TRANSIENTS; URANIUM POWDER METALLURGY;

LOGIC CIRCUITS;

EID: 70449108050     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173384     Document Type: Conference Paper

References (7)

1. T. C. May and M. H. Woods, "A new physical mechanism for soft errors in dynamic memories," Proc. IRPS, vol. 16, pp. 33-40, 1978.
2. C. M. Hsieh, P. C. Murley and R. R. O'Brien, "Collection of charge from alpha-particle track in Silicon devices," IEEE Trans. Electron Devices, vol. 30, pp. 686-693, 1983.
3. S. Satoh, R. Sudo, H. Tashiro, N. Higaki, S. Yamaguchi and N. Nakayama, "CMOS-SRAM Soft-Error Simulation System," Proc. IRPS, vol. 32, pp. 339-343. 1994.
4. K. Yamaguchi, Y. Takemura, K. Osada and Y. Saito, "Bipolar-mode multibit soft-error-mechanism analysis of SRAMs by three-dimensional device simulation," IEEE Trans. Electron Devices, vol. 54, pp. 3007-3017, 2007.
5. J. M. Benedetto, P. H. Eaton, D. G. Mavis, M. Gadlage and T. Turflinger, "Digital Single Event Transient Trends With Technology Node Scaling," IEEE Trans. Nuclear Science, vol. 53, pp. 3462-3465, 2006.
6. M. P. Baze and S. P. Buchner, "Attenuation of single event induced pulses in CMOS combinational logic," IEEE Trans. Nuclear Science, vol. 44, pp. 2217-2223, 1997.
7. T. Nakauchi, N. Mikami, A. Oyama, H. Kobayashi, H. Usui and J. Kase, "A Novel Technique for Mitigating Neutron-Induced Multi Cell Upset by means of Back Bias," Proc. IRPS, pp. 187-191, 2008.