Structural and optical properties of Cu(In,Ga)Se2 grown by close-spaced vapor transport technique

Materials Science in Semiconductor Processing

Volumn 12, Issue 1-2, 2009, Pages 82-87

  Bouloufa, A ^a,b   Djessas, K ^b   Todorovic, D ^c  

^a FERHAT ABBAS UNIVERSITY   (Algeria)

^b UNIVERSITÉ DE PERPIGNAN   (France)

^c UNIVERSITY OF BELGRADE   (Serbia)

Author keywords

CSVT; CuGa0.3In0.7Se2; Intrinsic defects; Photoacoustic spectroscopy; Thin film

Indexed keywords

ABSORPTION COEFFICIENTS; CLOSE-SPACED VAPOR TRANSPORTS; COMPOSITIONAL PROPERTIES; CSVT; CU(IN , GA)SE; CUGA0.3IN0.7SE2; DEEP LEVEL; GAP ENERGY; INTRINSIC DEFECTS; LARGE-AREA DEPOSITION; LOW COSTS; OPTICAL TRANSMISSION SPECTRUM; POLYCRYSTALLINE THIN FILM; SEM; SODA LIME GLASS; STRUCTURAL AND OPTICAL PROPERTIES; SUBSTRATE TEMPERATURE; TRANSPARENT CONDUCTING OXIDE;

ACTIVATION ENERGY; COPPER COMPOUNDS; GALLIUM; LIGHT TRANSMISSION; LIGHTING; OPTICAL PROPERTIES; PHOTOACOUSTIC EFFECT; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SELENIUM COMPOUNDS; SUBSTRATES; THIN FILM DEVICES; THIN FILMS; VAPORS; X RAY DIFFRACTION;

PHOTOACOUSTIC SPECTROSCOPY;

EID: 70449096083     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2009.07.010     Document Type: Article

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