Magnetic random access memory design using rings with controlled asymmetry

Nanotechnology

Volumn 15, Issue 10, 2004, Pages

  Mani, A S ^a   Geerpuram, D ^a   Domanowski, A ^a   Baskaran, V ^a   Metlushko, V ^a  

^a University of Illinois   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; LOGIC DESIGN; MICROSCOPIC EXAMINATION; REMANENCE; SILICA; SILICON WAFERS; SWITCHING;

CONTROLLED ASYMMETRY; MAGNETIC FORCE MICROSCOPY; PERMALLOY RING ELEMENTS;

RANDOM ACCESS STORAGE;

EID: 7044286424     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/15/10/024     Document Type: Conference Paper

References (10)

1. Zhu J, Zheng Y and Prinz G 2000 J. Appl. Phys. 87 6668
2. Heyderman L J, David C, Klaui M, Vaz C A F and Bland J A C 2003 J. Appl. Phys. 93 10011
3. Li S P, Peyrade D, Natali M, Lebib A, Chen Y, Ebels U, Buda L D and Ounadjela K 2001 Phys. Rev. Lett. 86 1102
4. Klaui M et al 2003 Phys. Rev. B 68 134426
5. Rothman J, Klaui M, Lopez-Diaz L, Vaz C A F, Bleloch A, Bland J A C, Cui Z and Speaks R 2001 Phys. Rev. Lett. 86 1098
6. Kläui M, Lopez-Diaz L, Rothman J, Vaz C A F, Bland J A C and Cui Z 2002 J. Magn. Magn. Mater. 240 1
7. Kläui M, Vaz C A F, Bland J A C, Wernsdorfer W, Faini G and Cambril E 2003 J. Appl. Phys. 93 7885
8. Kläui M, Vaz C A F, Bland J A C, Wernsdorfer W, Faini G and Cambril E 2002 Appl. Phys. Lett. 81 108
9. Zhu X, Grütter P, Metlushko V and Ilic B 2003 J. Appl. Phys. 93 7059
10. Vavassori P, Grimsditch M, Novosad V, Metlushko V and Ilic B 2003 J. Appl. Phys. 93 7900