Determination of junction temperature and thermal resistance in the GaN-based LEDs using direct temperature measurement

Physica Status Solidi C: Conferences

Volumn 1, Issue 10, 2004, Pages 2429-2432

  Hwang, Woong Joon ^a   Lee, Tae Hee ^a   Kim, Lan ^a   Shin, Moo Whan ^a  

^a Myong Ji University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FINITE ELEMENT METHOD; GALLIUM NITRIDE; HEAT RESISTANCE; LIGHT EMITTING DIODES; LIQUID CRYSTALS; OPTICAL MICROSCOPY; THERMOCOUPLES; THERMOGRAPHY (TEMPERATURE MEASUREMENT);

ILLUMINATION SOURCES; ISOTROPIC TRANSITION; JUNCTION TEMPERATURE; THERMAL MEASUREMENT;

SEMICONDUCTOR JUNCTIONS;

EID: 7044253260     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200405098     Document Type: Conference Paper

References (4)

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3. H. Lin, M. Khan, and T. Giao, Proc. of 20th Internat. Symp. for Testing and Failure Analysis, 1994, p. 81.
4. Manual of ANSYS, Version Release 8.0, Oct. 2003.