A backside-illuminated image sensor with 200000 pixels operating at 250000 frames per second

IEEE Transactions on Electron Devices

Volumn 56, Issue 11, 2009, Pages 2556-2562

  Vo Le, Cuong ^a   Etoh, T Goji ^a   Nguyen, H D ^a   Dao, V T S ^a   Soya, H ^b   Lesser, Michael ^c   Ouellette, David ^c   van Kuijk, H ^d   Bosiers, J ^d   Ingram, G ^e  

^a KINKI UNIVERSITY   (Japan)

^b SHIMADZU CORPORATION   (Japan)

^c UNIVERSITY OF ARIZONA   (United States)

^d DALSA Professional Imaging   (Netherlands)

^e DALSA Corporation   (Canada)

Author keywords

Charge carrier multiplication (CCM); High sensitivity; High speed; In situ storage image sensor (ISIS)

Indexed keywords

BACKSIDE ILLUMINATION; BACKSIDE-ILLUMINATED; CARRIER MULTIPLICATION; CHARGE-CARRIER MULTIPLICATION (CCM); FRAMES PER SECONDS; HIGH FRAME RATE; HIGH SENSITIVITY; HIGH SPEED; HIGH-SPEED IMAGE SENSORS; IN SITU STORAGE IMAGE SENSOR (ISIS); IN-SITU STORAGE IMAGE SENSOR; LOW SIGNAL LEVELS; NOISE FLOOR;

DIGITAL IMAGE STORAGE; IMAGE SENSORS; LASER PULSES; SOLID-STATE SENSORS;

MILITARY PHOTOGRAPHY;

EID: 70350735966     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2030601     Document Type: Article

References (4)

1. T. G. Etoh, D. Poggemann, A. Ruckelshausen, A. Theuwissen, G. Kreider, H.-O. Folkerts, H. Mutoh, Y. Kondo, H. Maruno, K. Takubo, H. Soya, K. Takehara, T. Okinaka, Y. Takano, T. Reisinger, and C. Lohmann, "A CCD image sensor of 1 Mframes/s for continuous image capturing 103 frames," in Proc. ISSCC Tech. Dig., 2002, pp. 46-47.
2. J. Hynecek, "Charge multiplying detector (CMD) suitable for small pixel CCD image sensors," U.S. Patent 5 337 340, Aug. 9, 1994.
3. H. Ohtake, T. Hayashida, K. Kitamura, T. Arai, J. Yonai, K. Tanioka, H. Maruyama, and T. G. Etoh, "300 000-pixel ultrahigh-speed high-sensitivity CCD and a single-chip color camera mounting this CCD," Broadcast. Technol., vol. 28, no. 2, pp. 2-9, 2006, NHK STRL.
4. T. G. Etoh, T. Hayashida, H. Maruyama, T. Arai, N. Uchiyama, and T. Sakamoto, "Backside illuminated image sensors manufactured with gradated double epitaxial layers: An application to a high-speed high-sensitivity image sensor," in Proc. Int. Image Sens. Workshop Dec. 2009, to be published.