SCOPUS 정보 검색 플랫폼

Volumn 95, Issue 17, 2009, Pages

Magnetic remanent states and quasistatic switching behavior of Fe split-rings for spin field-effect-transistor applications

(12) Lee, J H a Holmes, S N b Hong, B a Roy, P E a Mascaro, M D c Hayward, T J a,e Anderson, D a Cooper, K a Jones, G A C a Vickers, M E d Ross, C A c Barnes, C H W a

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

b TOSHIBA CORPORATION (Japan)

c Massachusetts Institute of Technology (United States)

d UNIVERSITY OF CAMBRIDGE (United Kingdom)

e UNIVERSITY OF SHEFFIELD (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC STATE; MAGNETORESISTANCE MEASUREMENTS; MICROMAGNETIC SIMULATIONS; PINNING SITES; QUASI-STATIC; REMANENT STATE; SPIN FIELDS; SPLIT RINGS; STRAY FIELD; SWITCHING BEHAVIORS; SWITCHING MECHANISM;

DOMAIN WALLS; ELECTRIC RESISTANCE; FIELD EFFECT TRANSISTORS; MAGNETIC FIELD EFFECTS; MAGNETIC FORCE MICROSCOPY; MAGNETORESISTANCE; SPIN DYNAMICS;

MAGNETIC DOMAINS;

EID: 70350724372 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3257360 Document Type: Article

Times cited : (14)

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