Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si

Journal of Applied Physics

Volumn 106, Issue 8, 2009, Pages

  Xu, H Y ^a   Guo, Y N ^a   Wang, Y ^a   Zou, J ^a   Kang, J H ^b   Gao, Q ^b   Tan, H H ^b   Jagadish, C ^b  

^a UNIVERSITY OF QUEENSLAND   (Australia)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

GAAS; GAAS FILMS; GAAS ON SI; GAAS THIN FILMS; HIGH TEMPERATURE; LATTICE DEFECTS; METALORGANIC CHEMICAL VAPOR DEPOSITION; POST ANNEALING; SI (1 1 1); SI(1 0 0); SUBSTRATE ORIENTATION; SURFACE ENERGIES;

CRYSTAL STRUCTURE; DEPOSITION; EPITAXIAL FILMS; EPITAXIAL GROWTH; EPITAXIAL LAYERS; GALLIUM ALLOYS; HETEROJUNCTION BIPOLAR TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; OPTICAL ENGINEERING; ORGANIC CHEMICALS; SEMICONDUCTING GALLIUM; SILICON; SUBSTRATES; SURFACE CHEMISTRY; SURFACE DEFECTS; SURFACE TENSION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70350716101     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3248372     Document Type: Article

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