Electric field tuning of spin-orbit coupling in KTaO3 field-effect transistors

Physical Review B - Condensed Matter and Materials Physics

Volumn 80, Issue 12, 2009, Pages

  Nakamura, H ^a   Kimura, T ^a  

^a OSAKA UNIVERSITY   (Japan)

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EID: 70350648391     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.121308     Document Type: Article

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32. Note that Rashba effect leads to k3 spin splitting, e.g., for GaAs hole band: angular momentum j=3/2 of the hole band gives rise to the higher order effect (Ref.). This argument can also be applied to the present system because the conduction-band minimum of KTaO3 is analogous to the valence-band maximum of GaAs from the symmetry point of view (Ref.). When k3 spin splitting is dominant, ILP theory gives the same result (Refs.) as the Hikami-Larkin-Nagaoka theory (Ref.).
33. The phase breaking mechanism most relevant in the present condition is probably the small-energy-transfer electron-electron scattering, which leads to lφ □ T-0.5 (Ref.). We find A=0.2-0.6 (in lφ □ T-A) depending on the sample and the gate voltage: we think, however, that the T range (2-8 K) available for extracting A is insufficient to discuss the phase breaking mechanism.
34. Estimated for structures studied in Refs. using parameters therein.
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