AB initio study of size and strain effects on the electronic properties of Si nanowires

International Journal of Applied Mechanics

Volumn 1, Issue 3, 2009, Pages 483-499

  Peng, X H ^a,b   Alizadeh, A ^c   Kumar, S K ^d   Nayak, S K ^b  

^a ARIZONA STATE UNIVERSITY   (United States)

^b Research Rensselaer Polytechnic Institute   (United States)

^c GE GLOBAL RESEARCH   (United States)

^d Columbia University ^*  (United States)

Author keywords

band gap; effective mass; Nanowires; strain

Indexed keywords

AB INITIO STUDY; BAND EDGE; COMPRESSIVE STRAIN; EFFECTIVE MASS; EXPANSIVE STRAIN; LINEAR FUNCTIONS; ORBITAL CHARACTER; SI NANOWIRE; SIZE DEPENDENCE; SIZE DEPENDENT; STRAIN EFFECT; UNI-AXIAL STRAINS;

CALCULATIONS; DENSITY FUNCTIONAL THEORY; ENERGY GAP; NANOWIRES; STRAIN; WIRE;

ELECTRONIC PROPERTIES;

EID: 70350601796     PISSN: 17588251     EISSN: 1758826X     Source Type: Journal    
DOI: 10.1142/S175882510900023X     Document Type: Article

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