Photoelectric properties of silicon nanocrystals/p3ht bulk-heterojunction ordered in titanium dioxide nanotube arrays

Nanoscale Research Letters

Volumn 4, Issue 11, 2009, Pages 1389-1394

  Švrček, Vladimir ^a   Turkevych, Ivan ^a   Kondo, Michio ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Bulk heterojunction; Silicon nanocrystals; Titanium dioxide nanotubes

Indexed keywords

AMBIENT CONDITIONS; ANATASE TIO; ANODIZATIONS; BULK HETEROJUNCTION; ELECTRONIC INTERACTIONS; FLUORIDE ION; HYBRID SOLAR CELLS; INNER DIAMETERS; NANOTUBE ARRAYS; PHOTOELECTRIC PROPERTY; POLY-3-HEXYLTHIOPHENE; POROUS TITANIUM DIOXIDE; SILICON NANOCRYSTALS; SURFACTANT-FREE; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; THERMAL-ANNEALING; TIO; TITANIUM DIOXIDE NANOTUBE ARRAY; TITANIUM DIOXIDE NANOTUBES; TITANIUM FOILS; VERTICAL DEVICES; VERTICAL ORDERING;

ETHYLENE; ETHYLENE GLYCOL; NANOCRYSTALS; NANOTUBES; PHOTOELECTRICITY; PHOTOVOLTAIC CELLS; POLYMERS; SILICON; SOLAR CELLS; SURFACE ACTIVE AGENTS; TITANIUM; TITANIUM DIOXIDE; TITANIUM OXIDES; TRANSPORT PROPERTIES;

HETEROJUNCTIONS;

EID: 70350591125     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1007/s11671-009-9410-y     Document Type: Article

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