Ultrafast acoustical gating of the photocurrent in a p-i-n tunneling diode incorporating a quantum well

Physical Review B - Condensed Matter and Materials Physics

Volumn 80, Issue 11, 2009, Pages

  Moss, D ^a   Akimov, A V ^a   Makarovsky, O ^a   Campion, R P ^a   Foxon, C T ^a   Eaves, L ^a   Kent, A J ^a   Glavin, B A ^b  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 70350582808     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.113306     Document Type: Article

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