Visible cw laser emission of GaN-diode pumped Pr:YAlO3 crystal

Applied Physics B: Lasers and Optics

Volumn 97, Issue 2, 2009, Pages 363-367

  Fibrich, M ^a   Jelinkova H ^a   Sulc J ^a   Nejezchleb, K ^b   Skoda V ^b  

^a CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

^b Crytur Ltd   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBED POWER; ABSORPTION AND EMISSION SPECTRA; CW-LASER; DECAY TIME; DIODE-PUMPED; GAN LASER DIODES; ION CONCENTRATIONS; ION DOPING; MATRIX; OUTPUT POWER; ROOM TEMPERATURE; SLOPE EFFICIENCIES; SPECTROSCOPIC PROPERTY;

EMISSION SPECTROSCOPY; FIBER LASERS; GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM;

PUMPING (LASER);

EID: 70350371109     PISSN: 09462171     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00340-009-3679-5     Document Type: Article

References (9)

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