Nano-engineering by implanting Al 2O 3 nano particle as sandwiched scattering centers in between the la 0.5pr 0.2sr 0.3mno 3 thin film layers

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 9, 2009, Pages 5687-5691

  Markna, J H ^a   Vachhani, P S ^a   Kuberkar, D G ^a   Shah, N A ^a   Misra, P ^b   Singh, B N ^b   Kukreja, L M ^b   Rana, D S ^c  

^a SAURASHTRA UNIVERSITY   (India)

^b RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY   (India)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

Magnetoresistance; Manganites; Nanostructure

Indexed keywords

DEVICE APPLICATION; EXTERNAL FIELDS; FIELD COEFFICIENT; IN-BETWEEN; LAYERED STRUCTURES; MAGNETO TRANSPORT PROPERTIES; NANO-ENGINEERING; NANO-STRUCTURED; NONMAGNETICS; SCATTERING CENTERS; TEMPERATURE COEFFICIENT OF RESISTANCE; THIN FILM LAYERS;

ELECTRIC RESISTANCE; FERROMAGNETIC MATERIALS; FERROMAGNETISM; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; MANGANITES; NANOPARTICLES; OXIDE MINERALS; PULSED LASER DEPOSITION; SCATTERING; SINGLE CRYSTALS;

ALUMINUM;

EID: 70350303185     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.1182     Document Type: Conference Paper

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