SET characteristics of phase change bridge devices

Materials Research Society Symposium Proceedings

Volumn 1072, Issue , 2008, Pages 42-47

  Krebs, Daniel ^a,b   Raoux, Simone ^b   Rettner, Charles T ^b   Shelby, Robert M ^b   Burr, Geoffrey W ^b   Wuttig, Matthias ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY COMPOUNDS; CRYSTALLIZATION KINETICS; GERMANIUM COMPOUNDS; PHASE CHANGE MEMORY; SWITCHING; THRESHOLD VOLTAGE;

AMORPHOUS PHASE; CRYSTALLINE PHASE; CURRENT PULSE; ELECTRICAL FIELD; NON-VOLATILE MEMORY APPLICATION; PHASE CHANGE RANDOM ACCESS MEMORY (PCRAM); SCALING STUDY; THRESHOLD SWITCHING;

PHASE CHANGE MATERIALS;

EID: 70350266532     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1072-g06-07     Document Type: Conference Paper

References (6)

1. S. R. Ovshinsky, Phys. Rev. Lett. 21, 1450 (1968).
2. N. Yamada, E. Ohno, K. Nishiuchi, N. Akahira, and M. Takao, J. Appl. Phys. 69, 2849 (1991).
3. Y. C. Chen et al., IEDM Technical Digest, p.777-780 (2006).
4. D. Adler, M. S. Shur, M. Silver, and S. R. Ovshinsky, J. Appl. Phys. 51, 3289 (1980).
5. S. R. Shenoy, J. of Non-Cry. Solids 85, 273 (1986).
6. D. Ielmini and Y. Zhang , J. Appl. Phys. 102, 054517 (2007).