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Volumn , Issue , 2009, Pages

The linear combination of bulk bands-method for electron and hole subband calculations in strained silicon films and surface layers

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE MASS; EFFECTIVE MASS APPROXIMATION; EMPIRICAL PSEUDOPOTENTIAL METHOD; FULL BAND STRUCTURES; GENERALIZED METHOD; HOLE SUBBAND STRUCTURE; HOLE SUBBANDS; LINEAR COMBINATION OF BULK BANDS; QUANTUM NUMBERS; SPIN ORBIT INTERACTIONS; STRAINED SILICON FILMS; SUB-BANDS; SURFACE LAYERS; THIN SILICON FILMS;

EID: 70350241399     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWCE.2009.5091158     Document Type: Conference Paper
Times cited : (3)

References (18)
  • 1
    • 29644440232 scopus 로고    scopus 로고
    • Linear combination of bulk bands method for investigating the low-dimensional electron gas in nanostructured devices
    • Oct
    • D. Esseni and P. Palestri, "Linear combination of bulk bands method for investigating the low-dimensional electron gas in nanostructured devices," Phys. Rev. B, vol. 72, no. 16, p. 165342, Oct 2005.
    • (2005) Phys. Rev. B , vol.72 , Issue.16 , pp. 165342
    • Esseni, D.1    Palestri, P.2
  • 2
    • 46049119862 scopus 로고    scopus 로고
    • Carrier transport in (110) nMOSFETs: Subband structure, non-parabolicity, mobility characteristics, and uniaxial stress engineering
    • K. Uchida, A. Kinoshita, and M. Saitoh, "Carrier transport in (110) nMOSFETs: Subband structure, non-parabolicity, mobility characteristics, and uniaxial stress engineering," in IEDM Techn. Dig., 2006, pp. 1019-1021.
    • (2006) IEDM Techn. Dig , pp. 1019-1021
    • Uchida, K.1    Kinoshita, A.2    Saitoh, M.3
  • 4
    • 50849134832 scopus 로고    scopus 로고
    • Two-band k·p model for the conduction band in silicon: Impact of strain and confinement on band structure and mobility
    • V. Sverdlov, G. Karlowatz, S. Dhar, H. Kosina, and S. Selberherr, "Two-band k·p model for the conduction band in silicon: Impact of strain and confinement on band structure and mobility," Solid-State Electron., vol. 52, pp. 1563-1568, 2008.
    • (2008) Solid-State Electron , vol.52 , pp. 1563-1568
    • Sverdlov, V.1    Karlowatz, G.2    Dhar, S.3    Kosina, H.4    Selberherr, S.5
  • 5
    • 33847697736 scopus 로고    scopus 로고
    • Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime
    • K. Uchida, T. Krishnamohan, K. C. Saraswat, and Y. Nishi, "Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime," in IEDM Techn. Dig., 2005, pp. 129-132.
    • (2005) IEDM Techn. Dig , pp. 129-132
    • Uchida, K.1    Krishnamohan, T.2    Saraswat, K.C.3    Nishi, Y.4
  • 6
    • 9944244767 scopus 로고
    • Cyclotron resonance in uniaxially stressed silicon. II. Nature of the covalent bond
    • Apr
    • J. C. Hensel, H. Hasegawa, and M. Nakayama, "Cyclotron resonance in uniaxially stressed silicon. II. Nature of the covalent bond," Phys. Rev., vol. 138, no. 1A, pp. A225-A238, Apr 1965.
    • (1965) Phys. Rev , vol.138 , Issue.1 A
    • Hensel, J.C.1    Hasegawa, H.2    Nakayama, M.3
  • 7
    • 0043210202 scopus 로고
    • Motion of electrons and holes in perturbed periodic fields
    • J. M. Luttinger and W. Kohn, "Motion of electrons and holes in perturbed periodic fields," Physical Review, vol. 97, no. 4, pp. 869-883, 1955.
    • (1955) Physical Review , vol.97 , Issue.4 , pp. 869-883
    • Luttinger, J.M.1    Kohn, W.2
  • 10
    • 12844286241 scopus 로고
    • Vienna Ab-initio Simulation Program, G.Kresse and J. Hafner
    • VASP
    • VASP, Vienna Ab-initio Simulation Program, G.Kresse and J. Hafner, Phys.Rev. B 47, 558 (1993);
    • (1993) Phys.Rev. B , vol.47 , pp. 558
  • 11
    • 27744460065 scopus 로고
    • ibid. B 49, 14251 (1994);
    • (1994) Phys.Rev. B , vol.B 49 , pp. 14251
  • 13
    • 33744570094 scopus 로고    scopus 로고
    • Computs.Mat.Sci. 6, 15 (1996).
    • (1996) Computs.Mat.Sci , vol.6 , pp. 15
  • 14
    • 2142713157 scopus 로고    scopus 로고
    • 5s* empirical tight-binding model applied to a si and ge parametrization
    • Online, Available
    • 5s* empirical tight-binding model applied to a si and ge parametrization," Physical Review B (Condensed Matter and Materials Physics), vol. 69, no. 11, p. 115201, 2004. [Online]. Available: http://link.aps.org/abstract/PRB/v69/e115201
    • (2004) Physical Review B (Condensed Matter and Materials Physics) , vol.69 , Issue.11 , pp. 115201
    • Boykin, T.B.1    Klimeck, G.2    Oyafuso, F.3
  • 15
    • 30344472859 scopus 로고    scopus 로고
    • y substrates, Physical Review B, 48, no. 19, pp. 14 276-14 287, Nov 1993.
    • y substrates," Physical Review B, vol. 48, no. 19, pp. 14 276-14 287, Nov 1993.
  • 18
    • 70350232909 scopus 로고    scopus 로고
    • Fullbandbulk quantization analysis reveals a third valley in (001) silicon invesrion layers
    • D. Esseni and P. Palestri, "Fullbandbulk quantization analysis reveals a third valley in (001) silicon invesrion layers," IEEE Electron Device Lett., vol. 24, no. 5, pp. 353-355, 2005.
    • (2005) IEEE Electron Device Lett , vol.24 , Issue.5 , pp. 353-355
    • Esseni, D.1    Palestri, P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.