60-GHz integrated transmitter development in 90-nm CMOS

IEEE Transactions on Microwave Theory and Techniques

Volumn 57, Issue 10, 2009, Pages 2354-2367

  Dawn, Debasis ^a   Sen, Padmanava ^a   Sarkar, Saikat ^a   Perumana, Bevin ^a   Pinel, Stephane ^a   Laskar, Joy ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

60 GHz; 90 nm; CMOS; Millimeter wave; Power amplifier (PA); Temperature characteristics; Transmitter

Indexed keywords

60 GHZ; 90 NM; CMOS; CMOS PROCESSS; CMOS TRANSMITTERS; CONVERSION LOSS; CROSS-COUPLED; DOUBLE-BALANCED; FULLY INTEGRATED; GILBERT CELLS; HIGH LINEARITY; HIGH PERFORMANCE APPLICATIONS; INTEGRATED TRANSMITTER; LOW POWER; LOW-POWER TRANSMITTERS; LOWER-POWER CONSUMPTION; MARCHAND BALUN; MEASUREMENT RESULTS; ON CHIPS; OUTPUT POWER; PROCESS VARIATION; PUSH-PUSH; REDUCED SIZE; RF BANDWIDTHS; SATURATED OUTPUT POWER; SINGLE-CHIP; SMALL-SIGNAL GAIN; TEMPERATURE CHARACTERISTICS; TOTAL POWER CONSUMPTION; UP-CONVERSION MIXERS; UP-CONVERTER; VOLTAGE CONTROLLED OSCILLATOR; WIDE TUNING RANGE;

CELL MEMBRANES; ELECTRIC POWER UTILIZATION; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; MIXER CIRCUITS; MIXERS (MACHINERY); POWER AMPLIFIERS; VARIABLE FREQUENCY OSCILLATORS;

TRANSMITTERS;

EID: 70350211090     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2009.2029028     Document Type: Article

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