Interstitial binary nitride ReNx phases prepared by pulsed laser deposition: Structure and superconductivity dependence on nitrogen stoichiometry

Journal of Alloys and Compounds

Volumn 486, Issue 1-2, 2009, Pages 621-627

  Fuchigami, Masayo ^a   Inumaru, Kei ^a   Yamanaka, Shoji ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Nitride; PtN; Structural change; Thin film

Indexed keywords

BAND CALCULATION; BINARY NITRIDES; COVALENT CHARACTER; CRYSTALLINE PHASIS; DENSITY OF STATE; DEPOSITION TEMPERATURES; FERMI ENERGY; FIRST-PRINCIPLES; HEXAGONAL STRUCTURES; INTERSTITIAL SITES; NITRIDE IONS; NITROGEN CONTENT; NITROGEN RADICAL; NITROGEN STOICHIOMETRY; PTN; ROOM TEMPERATURE; STRUCTURAL CHANGE;

CRYSTAL ATOMIC STRUCTURE; NITRIDES; NITROGEN; PULSED LASER DEPOSITION; STOICHIOMETRY; STRUCTURAL METALS; SUPERCONDUCTING TRANSITION TEMPERATURE; SUPERCONDUCTIVITY; SYNTHESIS (CHEMICAL); THIN FILM DEVICES; THIN FILMS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 70350134809     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.07.018     Document Type: Article

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