The dual GCT - A new high-power device using optimized GCT technology

IEEE Transactions on Industry Applications

Volumn 45, Issue 5, 2009, Pages 1754-1762

  Köllensperger, Peter ^a   Bragard, Michael ^a   Plum, Thomas ^a   De Doncker, Rik W ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Gate drive unit; GCT; IGCT; Power semiconductor device

Indexed keywords

ANALYTICAL DESIGN; DUAL GATES; FINITE-ELEMENT; GATE DRIVE UNIT; GCT; HIGH-POWER INVERTERS; IGCT; NEW DEVICES; NEW HIGH; POWER SEMICONDUCTOR DEVICE; SWITCHING LOSS;

ELECTRIC SWITCHGEAR; POWER ELECTRONICS; SEMICONDUCTOR SWITCHES; THYRISTORS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 70349967978     PISSN: 00939994     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIA.2009.2027364     Document Type: Article

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