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Journal of Luminescence

Volumn 129, Issue 12, 2009, Pages 1524-1526

Photoluminescence and Raman studies of Xe ion-implanted diamonds: Dependence on implantation dose

(4) Bergman, A A a Zaitsev, A M a Huang, Mengbing b Gorokhovsky, A A a

a CITY UNIVERSITY OF NEW YORK (United States)

b STATE UNIVERSITY OF NEW YORK (United States)

Author keywords

Diamond; Dose dependence; Ion implantation; Photoluminescence; Raman; Xe center

Indexed keywords

DOSE DEPENDENCE; DOSE DEPENDENCES; DOSE RANGE; HIGH-PURITY; IMPLANTATION DOSE; LUMINESCENCE INTENSITY; MICRO RAMAN SPECTROSCOPY; PHOTOLUMINESCENCE QUENCHING; RAMAN; RAMAN SPECTRA; RAMAN STUDIES; ROOM TEMPERATURE LUMINESCENCE; XE CENTER; ZERO PHONON LINES;

DIAMONDS; ION BOMBARDMENT; ION IMPLANTATION; LIGHT EMISSION; QUENCHING; RAMAN SCATTERING; RAMAN SPECTROSCOPY; XENON;

PHOTOLUMINESCENCE;

EID: 70349920677 PISSN: 00222313 EISSN: None Source Type: Journal
DOI: 10.1016/j.jlumin.2008.11.028 Document Type: Article

Times cited : (29)

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