Affinity of polystyrene films to hydrogen-passivated silicon and its relevance to the Tg of the films

Macromolecules

Volumn 42, Issue 19, 2009, Pages 7418-7422

  Fujii, Yoshihisa ^a   Yang, Zhaohui ^a   Leach, Jessica ^a   Atarashi, Hironori ^b   Tanaka, Keiji ^b   Tsui, Ophelia K C ^a  

^a Boston University   (United States)

^b KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENT THICKNESS; GLASS TRANSITION TEMPERATURE; HIGH TEMPERATURE; POLYSTYRENE FILMS; RESIDUAL FILMS; SI FILMS; SI SUBSTRATES; SI SURFACES; SUBSTRATE INTERFACE; X-RAY PHOTOELECTRONS; XPS;

ANNEALING; GLASS TRANSITION; HYDROGEN; PASSIVATION; POLYSTYRENES; SUPERCONDUCTING FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON;

EID: 70349912243     PISSN: 00249297     EISSN: None     Source Type: Journal    
DOI: 10.1021/ma901851w     Document Type: Article

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