Interlevel dielectric processes using PECVD silicon nitride, polyimide, and polybenzoxazole for GaAs HBT technology

Journal of the Electrochemical Society

Volumn 156, Issue 11, 2009, Pages

  Yota, Jiro ^a  

^a SKYWORKS SOLUTIONS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COST REQUIREMENTS; DEVICE DEGRADATION; DIELECTRIC CONSTANTS; GAAS; GAAS HBT; GAAS HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH DIELECTRIC CONSTANTS; HIGHER TEMPERATURES; INTERCONNECT STRUCTURES; INTERLEVEL DIELECTRIC; INTERLEVEL DIELECTRIC PROCESS; MAXIMUM TEMPERATURE; MULTILEVEL METALLIZATION; MULTIPLE FACTORS; PECVD SILICON NITRIDE; PHOTO-DEFINABLE; PLANARIZATION CAPABILITY; PLANARIZING; POLYBENZOXAZOLE; SEMICONDUCTOR DEVICE FABRICATION;

ANTIREFLECTION COATINGS; BIPOLAR TRANSISTORS; CERAMIC CAPACITORS; DIELECTRIC WAVEGUIDES; GALLIUM ALLOYS; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; PERMITTIVITY; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYIMIDES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; SILICON NITRIDE; SUPERCONDUCTING DEVICES;

DIELECTRIC MATERIALS;

EID: 70349736201     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3205868     Document Type: Article

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