Characterization of line edge roughness and line width roughness of nano-scale typical structures

4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009

Volumn , Issue , 2009, Pages 299-303

  Jiang, Zhuangde ^a,c   Zhao, Fengxia ^a   Jing, Weixuan ^a,b   Prewett, Philip D ^c   Jiang, Kyle ^c  

^a XI'AN JIAOTONG UNIVERSITY   (China)

^b TIANJIN UNIVERSITY   (China)

^c UNIVERSITY OF BIRMINGHAM   (United Kingdom)

Author keywords

Characterization; Fabrication; Line edge roughness; Line width roughness; Scanning electron microscopy

Indexed keywords

AUTOCORRELATION FUNCTIONS; ELECTRONIC BEAM LITHOGRAPHY; IMAGE ANALYSIS ALGORITHMS; LINE EDGE ROUGHNESS; LINE WIDTH ROUGHNESS; LINEWIDTH STANDARD; NANO SCALE; OFFLINE; POSITIVE RESISTS; POWER SPECTRAL DENSITY FUNCTION; SCANNING ELECTRON MICROSCOPY IMAGE; SILICON SUBSTRATES; STANDARD DEVIATION; STOCHASTIC PROCESS;

CHROMIUM; EDGE DETECTION; ERROR ANALYSIS; FABRICATION; IMAGE ANALYSIS; NANOSTRUCTURED MATERIALS; PHOTORESISTS; POWER SPECTRAL DENSITY; RANDOM PROCESSES; SCANNING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; STANDARDS; STATISTICS;

ROUGHNESS MEASUREMENT;

EID: 70349678273     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NEMS.2009.5068582     Document Type: Conference Paper

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