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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 5, 2009, Pages 2248-2251

Structural and luminescent properties of Er-doped ZnO films grown by metalorganic chemical vapor deposition

(4) Terai, Yoshikazu a Yamaoka, Keisuke a Yamaguchi, Takashi a Fujiwara, Yasufumi a

a OSAKA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; BAND EDGE; CRYSTALLOGRAPHIC ORIENTATIONS; ER-DOPED; ER-DOPING; LUMINESCENT CENTERS; LUMINESCENT PROPERTY; METALORGANIC CHEMICAL VAPOR DEPOSITION; NONRADIATIVE CENTERS; NONRADIATIVE RECOMBINATION CENTERS; PHOTOLUMINESCENCE INTENSITIES; PL INTENSITY; PL PROPERTY; TEMPERATURE ANNEALING; THERMAL-ANNEALING; ZNO;

ANNEALING; DOPING (ADDITIVES); LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; VAPORS; ZINC OXIDE;

ERBIUM;

EID: 70349662159 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.3204981 Document Type: Article

Times cited : (20)

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