A Raman study of high-pressure phases of lead chalcogenides PbX (X=S, Se, Te)

High Pressure Research

Volumn 29, Issue 2, 2009, Pages 224-229

  Ponosov, Yu S ^a,b   Ovsyannikov, S V ^a   Streltsov, S V ^a   Shchennikov, V V ^a   Syassen, K ^b  

^a INSTITUTE OF METAL PHYSICS   (Russian Federation)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

Lead chalcogenides; Phonons; Pressure; Raman scattering; Semiconductor to metal transition

Indexed keywords

HIGH-PRESSURE PHASIS; LEAD CHALCOGENIDES; ORTHORHOMBIC STRUCTURES; PRESSURE RANGES; PRESSURE-INDUCED PHASE TRANSITION; RAMAN LINES; RAMAN MODES; RAMAN STUDIES; SELECTION RULES; SEMICONDUCTOR-TO-METAL TRANSITIONS;

CESIUM ALLOYS; CHALCOGENIDES; LEAD COMPOUNDS; PHONONS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SCATTERING; SEMICONDUCTING SELENIUM COMPOUNDS;

PHASE TRANSITIONS;

EID: 70349598023     PISSN: 08957959     EISSN: 14772299     Source Type: Journal    
DOI: 10.1080/08957950802604787     Document Type: Article

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