High bandwidth operation of directly modulated laser based on quantum-dash InAs-InP material at 1.55 μm

IEEE Photonics Technology Letters

Volumn 20, Issue 11, 2008, Pages 903-905

  Dagens, B ^a   Make, D ^a   Lelarge, F ^a   Rousseau, B ^a   Calligaro, M ^a   Carbonnelle, M ^a   Pommereau, F ^a   Accard, A ^a   Poingt, F ^a   Le Gouezigou, L ^a   Dernazaretian, C ^a   Le Gouezigou, O ^a   Provost, J G ^a   Van Dijk, F ^a   Resneau, P ^a   Krakowski, M ^a   Duan, G H ^a  

^a ALCATEL THALES III V LAB   (France)

Author keywords

Directly modulated laser; Gas source molecular beam epitaxy; InAs InP quantum dashes (QDashes); InGaAsP InP lasers; Modulation bandwidth; Optical communication

Indexed keywords

DIRECTLY MODULATED LASERS; INAS; INAS-INP QUANTUM DASHES (QDASHES); INGAASP; INP; MODULATION BANDWIDTH; QUANTUM DASHES;

BANDWIDTH; CRYSTAL GROWTH; GAS SOURCE MOLECULAR BEAM EPITAXY; MODULATION; MOLECULAR BEAMS; OPTICAL COMMUNICATION; QUANTUM DOT LASERS; SEMICONDUCTING INDIUM; TELECOMMUNICATION SYSTEMS; WAVEGUIDES;

QUANTUM DASH LASERS;

EID: 70349516585     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.922349     Document Type: Article

References (11)

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