Erratum to 'CdXO3 (X = C, Si, Ge, Sn, Pb) electronic band structures' [Chem. Phys. Lett. 480 (2009) 273] (DOI:10.1016/j.cplett.2009.09.035);CdXO3 (X = C, Si, Ge, Sn, Pb) electronic band structures

Chemical Physics Letters

Volumn 480, Issue 4-6, 2009, Pages 273-277

  Barboza, C A ^a   Henriques, J M ^a   Albuquerque, E L ^a   Caetano, E W S ^b   Freire, V N ^c   da Costa, J A P ^c  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO NORTE   (Brazil)

^b INSTITUTO FEDERAL DE EDUCAÇÃO   (Brazil)

^c FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; ENERGY GAP; GERMANIUM COMPOUNDS; LEAD COMPOUNDS; LOCAL DENSITY APPROXIMATION; SILICON COMPOUNDS; TIN COMPOUNDS;

ELECTRONIC BAND GAPS; ELECTRONIC BAND STRUCTURE; GENERALIZED GRADIENT APPROXIMATIONS; INDIRECT BAND GAP; INTER-BAND TRANSITION; KOHN SHAMS; LOCAL DENSITY;

CADMIUM COMPOUNDS;

EID: 70349478665     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2009.10.028     Document Type: Erratum

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