Challenges of ultra low-k integration in BEOL interconnect for 45nm and beyond

Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009

Volumn , Issue , 2009, Pages 258-260

  Liu, H ^a   Widodo, J ^a   Liew, S L ^a   Wang, Z H ^a   Wang, Y H ^a   Lin, B F ^a   Wu, L Z ^a   Seet, C S ^a   Lu, W ^a   Low, C H ^a   Liu, W P ^a   Zhou, M S ^a   Hsia, L C ^a  

^a CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BACK END OF LINES; BARRIER DEPOSITION; MECHANICAL STRENGTH; NITROGEN DOPED SILICONS; PHYSICAL CHARACTERIZATION; PLASMA INDUCED DAMAGE; RESISTANCE CAPACITANCE; ULTRA LOW-K; ULTRA VIOLET;

PLASMA DEPOSITION; SILICON CARBIDE;

REACTIVE ION ETCHING;

EID: 70349464957     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2009.5090403     Document Type: Conference Paper

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6. N.Matsunaga et al., Proc. of IEEE IITC, 2005, p.6