Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers

Semiconductors

Volumn 43, Issue 7, 2009, Pages 963-967

  Lundin, W V ^a   Sakharov, A V ^a   Zavarin, E E ^a   Sinitsyn, M A ^a   Nikolaev, A E ^a   Mikhailovsky, G A ^a   Brunkov, P N ^a   Goncharov, V V ^a   Ber, B Ya ^a   Kazantsev, D Yu ^a   Tsatsulnikov, A F ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

61.72.uj; 68.37.Ps; 81.05.Ea; 81.15.Gh

Indexed keywords

EID: 70349443599     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782609070276     Document Type: Article

References (12)

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