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Journal of Materials Science: Materials in Electronics

Volumn 20, Issue 11, 2009, Pages 1129-1134

Influence of rapid thermal annealing (RTA) on the structural and electrical properties of SnS films

(5) Devika, M a Koteeswara Reddy, N b,c Venkatramana Reddy, S a Ramesh, K b Gunasekhar, K R b

a SRI VENKATESWARA UNIVERSITY (India)

b INDIAN INSTITUTE OF SCIENCE (India)

c TEL AVIV UNIVERSITY (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; CARRIER DENSITY; ELECTRICAL RESISTIVITY; HIGH QUALITY; METAL ATOMS; POST TREATMENT; PRECISE CONTROL; SNS FILMS; STRUCTURAL AND ELECTRICAL PROPERTIES;

ELECTRIC CONDUCTIVITY; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; OPTOELECTRONIC DEVICES; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTOR MATERIALS;

CRYSTAL STRUCTURE;

EID: 70349428828 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-008-9838-3 Document Type: Article

Times cited : (31)

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