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Journal of Applied Physics

Volumn 106, Issue 5, 2009, Pages

Long term operation of high quantum efficiency GaAs(Cs,O) photocathodes using multiple recleaning by atomic hydrogen

(7) Orlov, D A a Krantz, C a Wolf, A a Jaroshevich, A S b Kosolobov, S N b Scheibler, H E b Terekhov, A S b

a MAX PLANCK INSTITUT FÜR KERNPHYSIK (Germany)

b INSTITUTE OF SEMICONDUCTOR PHYSICS (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION LAYER; ATOMIC HYDROGEN; ATOMIC HYDROGEN CLEANING; ATOMIC HYDROGEN TREATMENT; CLEANING PROCEDURES; DISLOCATION NETWORKS; GAAS; GAAS PHOTOCATHODES; HEATING CYCLES; HETEROSTRUCTURES; HIGH QUANTUM EFFICIENCY; LONG-TERM OPERATION; METALORGANIC CHEMICAL VAPOR DEPOSITION; MULTI-CHAMBER; PHOTOEMISSION SPECTROSCOPY; PHOTOLUMINESCENCE INTENSITIES; SLOW DEGRADATION; SPATIAL DISTRIBUTION; THERMAL DISSOCIATION;

CESIUM; CRYSTAL GROWTH; DEGRADATION; DISSOCIATION; EMISSION SPECTROSCOPY; FIELD EMISSION CATHODES; GALLIUM ALLOYS; HYDROGEN; METAL RECOVERY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; PHOTOCATHODES; PHOTOELECTRICITY; PUMPS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SURFACE CLEANING; TUNGSTEN; ULTRAHIGH VACUUM;

QUANTUM EFFICIENCY;

EID: 70349317368 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3208054 Document Type: Article

Times cited : (31)

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