Schottky barrier field effect transistors with a strained carbon nanotube channel

Journal of Computational and Theoretical Nanoscience

Volumn 6, Issue 7, 2009, Pages 1571-1579

  Kordrostami, Zoheir ^a   Sheikhi, Mohammad Hossein ^a  

^a SHIRAZ UNIVERSITY   (Iran)

Author keywords

Axial strain; Carbon nanotube field effect transistor; Schottky barrier; Twist

Indexed keywords

APPLIED STRAIN; AXIAL STRAIN; BAND GAPS; CARBON NANOTUBE FIELD EFFECT TRANSISTOR; COMPUTATIONAL SAVINGS; DIAGNOSTIC TOOLS; DINGER EQUATION; ELECTROSTATIC POTENTIALS; ON/OFF RATIO; QUANTUM CAPACITANCE; SCHOTTKY BARRIER; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SEMICLASSICAL APPROACHES; THERMIONIC EMISSION CURRENT; TUNNELING CURRENT; TWIST; WKB METHOD;

CARBON NANOTUBES; ELECTRON MULTIPLIERS; ENERGY GAP; LAPLACE EQUATION; SCHOTTKY BARRIER DIODES; STEREOCHEMISTRY; THERMIONIC EMISSION; TUNNELING (EXCAVATION); WIND TUNNELS;

FIELD EFFECT TRANSISTORS;

EID: 70349301444     PISSN: 15461955     EISSN: None     Source Type: Journal    
DOI: 10.1166/jctn.2009.1214     Document Type: Article

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