Influence of oxygen and post deposition annealing on the electrical properties of MnPc and MnPcCL Schottky barrier devices

Journal of Materials Science

Volumn 40, Issue 5, 2005, Pages 1115-1120

  Rajesh, K R ^a   Menon, C S ^a  

^a MAHATMA GANDHI UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BIAS VOLTAGE; CHLORINE COMPOUNDS; ELECTRODES; GOLD; MANGANESE; NITROGEN COMPOUNDS; OXYGEN; SCHOTTKY BARRIER DIODES; THERMAL EVAPORATION;

CURRENT DENSITY-VOLTAGE CHARACTERISTICS; DEVICE CHARACTERISTICS; ELECTRICAL CONDUCTIVITY; ELECTRICAL PARAMETER; POST DEPOSITION ANNEALING; RECTIFICATION PROPERTIES; SCHOTTKY-BARRIER DEVICES; SPACE CHARGE LIMITED CONDUCTIVITIES;

ALUMINUM;

EID: 70349261674     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-005-6926-0     Document Type: Article

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