Electrical resistivity of Yb (Rh1 - x Cox)2 Si2 single crystals at low temperatures

Physica B: Condensed Matter

Volumn 404, Issue 19, 2009, Pages 2890-2893

  Friedemann, S ^a   Oeschler, N ^a   Krellner, C ^a   Geibel, C ^a   Steglich, F ^a  

^a MAX PLANCK INSTITUTE FOR CHEMICAL PHYSICS OF SOLIDS   (Germany)

Author keywords

Non Fermi liquid; Quantum critical point; Resistivity; YbRh2 Si2

Indexed keywords

ANTIFERROMAGNETIC TRANSITION TEMPERATURE; CO CONTENT; CO SUBSTITUTION; ELECTRICAL RESISTIVITY; ISOELECTRONIC SUBSTITUTION; LINEAR TEMPERATURE DEPENDENCE; LOW TEMPERATURES; LOW-TEMPERATURE MEASUREMENTS; NON-FERMI LIQUID; NON-FERMI LIQUIDS; QUANTUM CRITICAL POINT; RESISTIVITY; SUSCEPTIBILITY MEASUREMENTS; UNIT-CELL VOLUME; YBRH2 SI2;

ANTIFERROMAGNETIC MATERIALS; ANTIFERROMAGNETISM; CELL MEMBRANES; ELECTRIC CONDUCTIVITY; EQUATIONS OF STATE; FERMI LIQUIDS; FERMI SURFACE; FERMIONS; FERROMAGNETISM; HYDROSTATIC PRESSURE; LIQUIDS; NEON; RHODIUM; SILICON; TEMPERATURE MEASUREMENT; YTTERBIUM;

SINGLE CRYSTALS;

EID: 70349148997     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.07.041     Document Type: Article

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